Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP
Identifieur interne : 00BF17 ( Main/Repository ); précédent : 00BF16; suivant : 00BF18Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP
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Abstract
We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified superlattice offers much greater advantages than the conventional InGaAs matrix layer for the growth of InAs quantum dots, where a thick InAs layer is required for the dot formation. By adjusting the number of period and the layer thickness of the superlattice structure, uniform InAs quantum dots are achieved even using an InAs deposition as thin as 2.5 monolayers. Photoluminescence measurements further verify a uniform size distribution of the achieved quantum dots. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP</title><author><name sortKey="Zhang, Z H" uniqKey="Zhang Z">Z. H. Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Cheng, K Y" uniqKey="Cheng K">K. Y. Cheng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0418186</idno><date when="2003-10-13">2003-10-13</date><idno type="stanalyst">PASCAL 03-0418186 AIP</idno><idno type="RBID">Pascal:03-0418186</idno><idno type="wicri:Area/Main/Corpus">00C913</idno><idno type="wicri:Area/Main/Repository">00BF17</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Semiconductor superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865H</term><term>8107T</term><term>7867H</term><term>7867P</term><term>7855C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Point quantique semiconducteur</term><term>Croissance semiconducteur</term><term>Superréseau semiconducteur</term><term>Semiconducteur III-V</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified superlattice offers much greater advantages than the conventional InGaAs matrix layer for the growth of InAs quantum dots, where a thick InAs layer is required for the dot formation. By adjusting the number of period and the layer thickness of the superlattice structure, uniform InAs quantum dots are achieved even using an InAs deposition as thin as 2.5 monolayers. Photoluminescence measurements further verify a uniform size distribution of the achieved quantum dots. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (Z. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHENG (K. Y.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, and Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>3183-3185</s1></fA20><fA21><s1>2003-10-13</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0418186</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified superlattice offers much greater advantages than the conventional InGaAs matrix layer for the growth of InAs quantum dots, where a thick InAs layer is required for the dot formation. By adjusting the number of period and the layer thickness of the superlattice structure, uniform InAs quantum dots are achieved even using an InAs deposition as thin as 2.5 monolayers. 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